課程名稱 |
(中文) 半導體元件製造程序 (英文) Fabricating Pprocess Of Semiconductor Devices |
開課單位 | 化學工程與生物科技學系 | ||
課程代碼 | C4730 | ||||
授課教師 | 郭欽湊 | ||||
學分數 | 3.0 | 必/選修 | 選修 | 開課年級 | 大四 |
先修科目或先備能力:化學與物理 | |||||
課程概述與目標:介紹半導體材料與基礎理論 ,IC製程及檢測技術 | |||||
教科書 | 李克駿 李克慧 李名錄 編著 "半導體製程概論" 第四版 全華圖書公司 [黃文珍 0958008962 (02-22625666--- 160) 2020/11 |
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參考教材 |
課程大綱 | 學生學習目標 | 單元學習活動 | 學習成效評量 | 備註 | ||
週 | 單元主題 | 內容綱要 | ||||
1 | 前言 半導體與積體電路發展史 | History Transistor IC IC semiconductor processes |
Overview of semiconductor history | |||
2 | 第一章 晶體結構與矽半導體物理特性 | Atomic model and Periodic table Crystal structure Material conductivity (Dopant, n-type and p-type) |
Review of General Chemistry | |||
3 | 第二章 半導體能帶與載子傳輸 | Energy band Resistivity and stress resistance Carrier transport |
Review of General Physics | |||
4 | 第三章 化合物半導體晶體結構與物理特性 | Compound semiconductors Crystal structure and energy band of Gallium Arsenide Crystal structure and energy band of Gallium Nitride Crystal structure and energy band of Silicon Carbide |
Review of General Materials | |||
5 | 第四章 半導體基礎元件 | Diode Transistor Capacitor DRAM and SRAM |
Overview of discrete devices | |||
6 | 第五章接面能帶與費米能階 | Density of states Fermi distribution function of Intrinsic semiconductor and Doped semiconductors Fermi level and junction band diagram |
Understand of semiconductor physics | |||
7 | 第六章 積體電路製程與佈局 | Circuit and Integrated Circuit(IC) Design rules Layout |
Overview of semiconductor design | |||
8 | 第七章 半導體元件縮小化與先進奈米元件 | Scaling of MOSFET Short-channel effects SOI-MOSFET FinFET 3 Dimensional IC |
Understand of advanced IC devices | |||
9 | 第十章 矽晶棒之生長 | Starting materials Silicon ingot growth (CZ and FZ) Dopants distribution in crystal growth Crystal defects |
Understand of Silicon wafer fabrication | |||
10 | 第十一章 矽晶圓之製作 | Crystal orientation Orientation Sawing and Polishing Benefit analysis of 12 inch wafer |
Study of silicon wafer | |||
11 | 第十三章 矽磊晶生長 | Epitaxial layer Silicon epitaxy Growth process of Si epitaxial layer |
Studies of epitaxial layer | |||
12 | 第十六章 矽氧化膜生長 | Thermal oxidation furnace Si oxidation process Dry and wet oxidation and thickness Redistribution of dopant during thermal oxidation |
Studies of Si oxidation | |||
13 | 第十八章 擴散與離子佈植 | Diffusion process The predeposition and drive in Distribution of diffusion Ion implantation |
Studies of diffusion and ion implantation | |||
14 | 第二十章 微影技術 | Lithography Fabrication of mask Photolithography Resolution enhancement techniques |
Studies of photolithography | |||
15 | 第二十一章 蝕刻技術 | Wet etching of Si and compound semiconductors Dry etching |
Studiesof wet and dry etchings | |||
16 | 第二十二章 化學與物理氣相沉積 | CVD procedures Plasma CVD Photo-CVD Atomic layer deposition PVD |
Studies of CVD and PVD |
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17 | 第二十四章 積體電路封裝 | IC package packaging flow chart 3 Dimensional package |
Studies of IC package | |||
18 | 第二十五章積體電路故障與檢測 | Basic idea of reliability Failure models EMI and ESD Surface morphology, crystal structure, and composition analysis instruments |
Studies of IC testing and relative instruments |
教學要點概述: |