課程名稱
Course Title |
(中文) 數位積體電路
(英文) Digital Integrated Circuits |
開課單位
Departments |
電機工程研究所 |
課程代碼
Course No. |
E4240 |
授課教師
Instructor |
林銘波 |
學分數
Credit |
3.0 |
必/選修
core required/optional |
選修 |
開課年級
Level |
研究所 |
| 先修科目或先備能力(Course Pre-requisites)：電子學 |
課程概述與目標(Course Overview and Goals)：The objective of this course is to familiarize the student with the design and analysis of digital integrated circuits. Upon completion, the student will be able to understand the fundamental ability and limitations of digital integrated circuits. To reach this, topics of this course include semiconductor fundamentals, the physics and features of the three basic VLSI elements (the pn junction, metal-to-semiconductor junction, and MOS capacitor), MOSFET physics and modeling, static and dynamic circuits, the CMOS memory design, interconnect, power and clock distribution networks, and I/O as well as ESD circuits.
Course outline
1. Semiconductor fundamentals:
Pauli exclusion principle, formation of energy band, Fermi probability function, density of state function, intrinsic semiconductor, extrinsic semiconductor, charge neutrality, position of Fermi energy level, carrier transport, drift velocity and current, mobility effects, conductivity and resistivity, diffusion and diffusion current.
2. pn junction: Basic structure, zero-biased, forward-baised, reverse-biased, built-in potential, and ideal current-voltage relationship.
3. MOS systems: Work function, flat-band voltage, MOS structures, MOS system, threshold voltage, effect of body bias, and ideal C-V characteristics.
4. MOS transistors: Basic structure, operating modes, $I$-$V$ characteristics, channel-length modulation, body-bias effect, subthreshold conduction, MOS capacitance, scaling theory, short-channel effects, narrow-channel effects, and other second-order effects.
5. Modeling of diode and MOS transistors: Diode model, Level 1, 3, BSIMv3 and BSIMv4 models, and binning process.
6. Static Circuits: Noise immunity and noise margins, CMOS inverters, voltage-transfer characteristics, pseudo-nMOS circuits, design of inverters, NAND gate circuits, and NOR gate circuits.
7. Dynamic Circuits: Basic features of nMOS, pMOS, and TG switches, basic dynamic logic, hazards of dynamic logic, avoidance of dynamic logic hazards, and non-ideal effects of dynamic logic, including leakage currents, charge injection and clock feedthrough, charge loss effects, and charge sharing effects.
8. Interconnect design: Interconnect trends, interconnect $RC$ delay, $RC$ delay in long wires, buffer insertion, components of coupling capacitances, effects of coupling capacitance, crosstalk, and interconnect inductance.
9. Power and clock distribution: Power distribution system design, $IR$ drop and $Ldi/dt$, decoupling capacitance design, clock definitions, effect of clock skew, gated clock, clock generation, clock distribution, and PLL.
10 I/O circuits: I/O circuits design, inverting and noninverting Schmitt circuits, signal integrity problems, and SSO.
11. Introduction to ESD: ESD models, and basic ESD protection circuits.
12. CMOS Memory design (if time allowed): Memory classification, memory organization, memory access timing, memory core (including ROM, NVRWM, RAM, and DRAM), row address decoder, column address decoder, read/write buffers, sense amplifiers, timing and control, and voltage references.
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| 教科書(Textbook) |
1. Ming-Bo Lin, Introduction to VLSI Systems: A Logic, Circuit, and System Design Perspective, CRC Press, 2012.
2.Sung-Mo Kang and Yusuf Leblebici, CMOS Digital Integrated Circuits: Analysis and Design, 4th ed., New York: McGraw-Hill, 2016.
3.Ming-Bo Lin, Lecture Notes, 2025. |
| 參考教材(Reference) |
1. Donald A. Neamen, Semiconductor Physics and Devices: Basic Principles, 4th ed., New York: McGraw-Hill, 2012. (Any edition is fine.)
2. Ben G. Streetman and Sanjay K. Banerjee, Solid State Electronic Devices, 7th ed., Global edition, Pearson, 2016. |
| 圖書館電子書(E-book of the Library) |
N/A |
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