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課程名稱 (中文) 半導體元件物理
(英文) Semiconductor Devices Physics
開課單位 電機工程研究所
課程代碼 E5140
授課教師 林炯暐
學分數 3.0 必/選修 選修 開課年級 研究所
先修科目或先備能力:
課程概述與目標:本課程主要引導同學了解微電子元件之動作原理,是積體電路設計如物聯網、人工智慧系開發所必需有的基礎。使同學具備進入高科技如台積電、群創、友達以及日月光等職場。
教科書 Semiconductor Devices: Physics and Technology, 2nd Edition by Simon M. Sze (施敏), 2002, John Wiley & Sons, Inc. ISBN: O-471-33372-7
參考教材 Physics of semiconductor devices, 3 e, S. M. SZE , 2006, John Wiley & Sons, Inc. ISBN: O-471-14323-5 Wiley
課程大綱 學生學習目標 單元學習活動 學習成效評量 備註
單元主題 內容綱要
1 微電子積體電路時代的介紹 Materials, Devices, Circuits and Systems Trend and Future The purpose of this course is to provide the basic knowledge to the physical properties for semiconductor devices.  
2 半導體固態物質之晶體結構 Crystal structure Si, Ge, GaAs materials Crystal structure Si, Ge, GaAs materials  
3 半導體電子能隙結構、載子生成之電氣特性 Direct and Indirect Energy Band Generation and Recombination of Carriers
Tunnelimg Process, High-Field Effects
Direct and Indirect Energy Band Generation and Recombination of Carriers
Tunnelimg Process, High-Field Effects
 
4 載子濃度與電流形式 Calculation of carrier concentration
Temperature effects
Calculation of carrier concentration
Temperature effects
 
5 PN 接面二極體結構與操作原理 Energy Band of PN junction
I-V and C-V relationship
Device Modeling
Energy Band of PN junction
I-V and C-V relationship
Device Modeling
 
6 PN 接面二極體結構與操作原理 Energy Band of PN junction
I-V and C-V relationship
Device Modeling
Energy Band of PN junction
I-V and C-V relationship
Device Modeling
  • 作業
  •  
    7 BJT (雙載子接面電晶體;Bipolar Junction Transistor)結構與操作原理 Transistor Actions,Static
    Characteristics of BJT,Frequency
    Response and Switching of BJT
    Transistor Actions,Static
    Characteristics of BJT,Frequency
    Response and Switching of BJT
     
    8 BJT (雙載子接面電晶體;Bipolar Junction Transistor)結構與操作原理 Transistor Actions,Static
    Characteristics of BJT,Frequency
    Response and Switching of BJT
    Transistor Actions,Static
    Characteristics of BJT,Frequency
    Response and Switching of BJT
     
    9 期中考試評量 期中考試評量 期中考試評量
  • 期中考
  •  
    10 MOS capacitor(金氧半電容)結構與操作原理 MOS capacitor Fundamentals, MOS Memory Structures MOS capacitor Fundamentals, MOS Memory Structures  
    11 MOS capacitor(金氧半電容)結構與操作原理 MOS capacitor Fundamentals, MOS Memory Structures MOS capacitor Fundamentals, MOS Memory Structures  
    12 MOSFET(金氧半場效電晶體)結構與操作原理 MOSFET Fundamentals, MOSFET
    Scaling, MOSFET on Insulator,
    MOS Memory Structures and The
    Power MOSFET
    MOSFET Fundamentals, MOSFET
    Scaling, MOSFET on Insulator,
    MOS Memory Structures and The
    Power MOSFET
     
    13 MOSFET(金氧半場效電晶體)結構與操作原理 MOSFET Fundamentals, MOSFET
    Scaling, MOSFET on Insulator,
    MOS Memory Structures and The
    Power MOSFET
    MOSFET Fundamentals, MOSFET
    Scaling, MOSFET on Insulator,
    MOS Memory Structures and The
    Power MOSFET
     
    14 MESFET and Related Devices(金半場效電晶體與相關電子元件) Metal-Semiconductor Contacts,
    MESFET and MODFET
    Metal-Semiconductor Contacts,
    MESFET and MODFET
     
    15 MESFET and Related Devices(金半場效電晶體與相關電子元件) Metal-Semiconductor Contacts,
    MESFET and MODFET
    Metal-Semiconductor Contacts,
    MESFET and MODFET
  • 作業
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    16 微波二極體,量子效應 and 熱載子電子元件 Tunnel Diode,IMPATT Diode, Transderred-Electron Devices, Quanum-Effect Devices Tunnel Diode,IMPATT Diode, Transderred-Electron Devices, Quanum-Effect Devices  
    17 微波二極體,量子效應 and 熱載子電子元件 Tunnel Diode,IMPATT Diode, Transderred-Electron Devices, Quanum-Effect Devices Tunnel Diode,IMPATT Diode, Transderred-Electron Devices, Quanum-Effect Devices  
    18 期末考試評量 期末考試評量 期末考試評量
  • 期末考
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    教學要點概述:
    教材編選: ■ 自編教材 ■ 教科書作者提供
    評量方法: 期末考:30%   期中考:30%   其他評量:10%   問答:10%   報告:10%   作業:10%  
    教學資源: ■ 教材電子檔 □ 課程網站
    扣考規定:http://eboard.ttu.edu.tw/ttuwebpost/showcontent-news.php?id=504