課程名稱Course Title (中文) 半導體元件物理 (英文) Semiconductor Devices Physics 開課單位Departments 電機工程研究所 課程代碼Course No. E5140 授課教師Instructor 林炯暐 學分數Credit 3.0 必/選修core required/optional 選修 開課年級Level 研究所 先修科目或先備能力(Course Pre-requisites)： 課程概述與目標(Course Overview and Goals)：本課程主要引導同學了解微電子元件之動作原理，是積體電路設計如物聯網、人工智慧系開發所必需有的基礎。使同學具備進入高科技如台積電、群創、友達以及日月光等職場。 教科書(Textbook) Semiconductor Devices: Physics and Technology, 2nd Edition by Simon M. Sze (施敏), 2002, John Wiley & Sons, Inc. ISBN: O-471-33372-7 參考教材(Reference) Physics of semiconductor devices, 3 e, S. M. SZE , 2006, John Wiley & Sons, Inc. ISBN: O-471-14323-5 Wiley
 課程大綱 Syllabus 學生學習目標Learning Objectives 單元學習活動Learning Activities 學習成效評量Evaluation 備註Notes 序No. 單元主題Unit topic 內容綱要Content summary 1 半導體固態物質之晶體結構 Crystal structure Si, Ge, GaAs materials Crystal structure Si, Ge, GaAs materials 2 半導體電子能隙結構、載子生成之電氣特性 Direct and Indirect Energy Band Generation and Recombination of Carriers Tunnelimg Process, High-Field Effects Direct and Indirect Energy Band Generation and Recombination of Carriers Tunnelimg Process, High-Field Effects 3 載子濃度與電流形式 Calculation of carrier concentration Temperature effects Calculation of carrier concentration Temperature effects 4 PN 接面二極體結構與操作原理 Energy Band of PN junction I-V and C-V relationship Device Modeling Energy Band of PN junction I-V and C-V relationship Device Modeling 5 PN 接面二極體結構與操作原理 Energy Band of PN junction I-V and C-V relationship Device Modeling Energy Band of PN junction I-V and C-V relationship Device Modeling 6 BJT (雙載子接面電晶體；Bipolar Junction Transistor)結構與操作原理 Transistor Actions,Static Characteristics of BJT,Frequency Response and Switching of BJT Transistor Actions,Static Characteristics of BJT,Frequency Response and Switching of BJT 7 BJT (雙載子接面電晶體；Bipolar Junction Transistor)結構與操作原理 Transistor Actions,Static Characteristics of BJT,Frequency Response and Switching of BJT Transistor Actions,Static Characteristics of BJT,Frequency Response and Switching of BJT 8 期中考試評量 期中考試評量 期中考試評量 9 MOS capacitor(金氧半電容)結構與操作原理 MOS capacitor Fundamentals, MOS Memory Structures MOS capacitor Fundamentals, MOS Memory Structures 10 MOS capacitor(金氧半電容)結構與操作原理 MOS capacitor Fundamentals, MOS Memory Structures MOS capacitor Fundamentals, MOS Memory Structures 11 MOSFET(金氧半場效電晶體)結構與操作原理 MOSFET Fundamentals, MOSFET Scaling, MOSFET on Insulator, MOS Memory Structures and The Power MOSFET MOSFET Fundamentals, MOSFET Scaling, MOSFET on Insulator, MOS Memory Structures and The Power MOSFET 12 MOSFET(金氧半場效電晶體)結構與操作原理 MOSFET Fundamentals, MOSFET Scaling, MOSFET on Insulator, MOS Memory Structures and The Power MOSFET MOSFET Fundamentals, MOSFET Scaling, MOSFET on Insulator, MOS Memory Structures and The Power MOSFET 13 MESFET and Related Devices(金半場效電晶體與相關電子元件) Metal-Semiconductor Contacts, MESFET and MODFET Metal-Semiconductor Contacts, MESFET and MODFET 14 MESFET and Related Devices(金半場效電晶體與相關電子元件) Metal-Semiconductor Contacts, MESFET and MODFET Metal-Semiconductor Contacts, MESFET and MODFET 15 微波二極體，量子效應 and 熱載子電子元件 Tunnel Diode,IMPATT Diode, Transderred-Electron Devices, Quanum-Effect Devices Tunnel Diode,IMPATT Diode, Transderred-Electron Devices, Quanum-Effect Devices 16 期末考試評量 期末考試評量 期末考試評量 17 彈性教學(一) 學習內容回顧並由同學進行線上討論與心得感想說明 統整同學實質收穫 討論心得發表 彈性教學 18 彈性教學(二) 學習內容回顧並由同學進行線上討論與心得感想說明 統整同學實質收穫 討論心得發表 彈性教學

 序No. 實施期間Period 實施方式Content 教學說明Teaching instructions 彈性教學評量方式Evaluation 備註Notes 1 起:2024-01-01 迄:2024-01-14 1.同步遠距教學 Synchronous distance learning 整個學習內容回顧，老師與同學進行線上討論。 心得感想發表。

 教學要點概述： 1.自編教材 Handout by Instructor： ■ 1-1.簡報 Slids □ 1-2.影音教材 Videos □ 1-3.教具 Teaching Aids □ 1-4.教科書 Textbook □ 1-5.其他 Other □ 2.自編評量工具/量表 Educational Assessment □ 3.教科書作者提供 Textbook 成績考核 Performance Evaluation： 期末考：35%   期中考：35%   其他評量：20%   彈性教學：10%   教學資源(Teaching Resources)： ■ 教材電子檔(Soft Copy of the Handout or the Textbook) □ 課程網站(Website) 扣考規定：https://curri.ttu.edu.tw/p/412-1033-1254.php