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課程名稱 (中文) 表面分析技術
(英文) Surface Analysis Techniques
開課單位 材料工程研究所
課程代碼 T5300
授課教師 林鴻明
學分數 3.0 必/選修 選修 開課年級 研究所
先修科目或先備能力:物理 化學
課程概述與目標: 表面、表面層的構造、組成及電子狀態將影響材料特性。測定之方法,主要利用入射一次粒子如電子,離子,光子及中性粒子等撞擊固態表面,透過一次粒子與固態表面相互作用造成彈性及非彈性散射,因而從固態表面產生的電子、離子、或光子等二次粒子,以探討固體之表面特性。本課程將介紹因不同作用現象所衍生之分析技術,使學生由學理到分析技術瞭解材料表面分析之功能性及重要性。
教科書 "Surface Analysis - The Principal Techniques", Edited by John C. Vickerman, John Wiley & Sons, New York (1997).
參考教材 1.“材料分析”, 汪建民主編, 中國材料學會印行, 新竹市, 1998.
2. Kathleen Mills etc. eds., Metal Handbook Ninth Edition, Vol. 10 “Materials Characterization”, ASM, 1986.
3.“Instrumentation in Analytical Chemistry”, edited by Stuart A Bo
課程大綱 學生學習目標 單元學習活動 學習成效評量 備註
單元主題 內容綱要
1 I. Optical Microscopy I. Optical Microscopy I. Optical Microscopy  
2 II. Scanning Electron Microscopy II. Scanning Electron Microscopy II. Scanning Electron Microscopy  
3 III. Special Techniques A. Acoustic & Thermal Wave image
B. Field-electron and field-ion emission
- Field-electron microscopy
- Field-ion emission and field-ion desorption microscopy and the atom probe
A. Acoustic & Thermal Wave image
B. Field-electron and field-ion emission
- Field-electron microscopy
- Field-ion emission and field-ion desorption microscopy and the atom probe
 
4 III. Special Techniques C. Photo-induced radiation
- X-ray microscopy and X-ray topography
- Fluorescence microscopy and spectroscopy
D. Photo-electron emission
- Photo-electron emission microscopy
- Photo-electron spectroscopy
- Field-ion emission and field-ion desorption microscopy and the atom probe
C. Photo-induced radiation
- X-ray microscopy and X-ray topography
- Fluorescence microscopy and spectroscopy
D. Photo-electron emission
- Photo-electron emission microscopy
- Photo-electron spectroscopy
- Field-ion emission and field-ion desorption microscopy and the atom probe
 
5 III. Special Techniques C. Photo-induced radiation
- X-ray microscopy and X-ray topography
- Fluorescence microscopy and spectroscopy
D. Photo-electron emission
- Photo-electron emission microscopy
- Photo-electron spectroscopy
- Field-ion emission and field-ion desorption microscopy and the atom probe
C. Photo-induced radiation
- X-ray microscopy and X-ray topography
- Fluorescence microscopy and spectroscopy
D. Photo-electron emission
- Photo-electron emission microscopy
- Photo-electron spectroscopy
- Field-ion emission and field-ion desorption microscopy and the atom probe
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    6 IV. Electrons and Ions Stimulation A. Electron-beam and ion-induced radiation
    - X-ray Mapping
    - Energy- and Wavelength-dispersive X-ray Spectroscopy (EDS and WDS)
    - Cathodoluminescence
    - Ion- and proton-induced X-ray emission
    B. Electron-electron interaction
    - Auger-electron microscopy and spectroscopy (AEM and AES)
    - Low- and high-energy electron diffraction (LEED and HEED)
    A. Electron-beam and ion-induced radiation
    - X-ray Mapping
    - Energy- and Wavelength-dispersive X-ray Spectroscopy (EDS and WDS)
    - Cathodoluminescence
    - Ion- and proton-induced X-ray emission
    B. Electron-electron interaction
    - Auger-electron microscopy and spectroscopy (AEM and AES)
    - Low- and high-energy electron diffraction (LEED and HEED)
     
    7 IV. Electrons and Ions Stimulation A. Electron-beam and ion-induced radiation
    - X-ray Mapping
    - Energy- and Wavelength-dispersive X-ray Spectroscopy (EDS and WDS)
    - Cathodoluminescence
    - Ion- and proton-induced X-ray emission
    B. Electron-electron interaction
    - Auger-electron microscopy and spectroscopy (AEM and AES)
    - Low- and high-energy electron diffraction (LEED and HEED)
    A. Electron-beam and ion-induced radiation
    - X-ray Mapping
    - Energy- and Wavelength-dispersive X-ray Spectroscopy (EDS and WDS)
    - Cathodoluminescence
    - Ion- and proton-induced X-ray emission
    B. Electron-electron interaction
    - Auger-electron microscopy and spectroscopy (AEM and AES)
    - Low- and high-energy electron diffraction (LEED and HEED)
     
    8 IV. Electrons and Ions Stimulation C. Scanning Probe Miocroscopy
    - History of Scanning Tunneling Microscopy
    - Atomic Force microscopy
    - MFM, NFOM, etc.
    C. Scanning Probe Miocroscopy
    - History of Scanning Tunneling Microscopy
    - Atomic Force microscopy
    - MFM, NFOM, etc.
     
    9 期中考 I-IV.C章 期中評量
  • 期中考
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    10 IV. Electrons and Ions Stimulation D. Ion Microscopy
    - Ion-Scattering Spectroscopy
    - Secondary-Ion Mass Spectroscopy
    D. Ion Microscopy
    - Ion-Scattering Spectroscopy
    - Secondary-Ion Mass Spectroscopy
     
    11 V. Pohotos Sitimulation A. Photo-induced radiation A. Photo-induced radiation  
    12 V. Pohotos Sitimulation B. Photo-electron emission B. Photo-electron emission  
    13 V. Pohotos Sitimulation C. Synchrotron Radiation in Materials Analysis C. Synchrotron Radiation in Materials Analysis  
    14 V. Pohotos Sitimulation -Extended X-ray Absorption Fine Structure (EXAFS) -Extended X-ray Absorption Fine Structure (EXAFS)
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    15 V. Pohotos Sitimulation -Extended X-ray Absorption Fine Structure (EXAFS) -Extended X-ray Absorption Fine Structure (EXAFS)
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    16 V. Pohotos Sitimulation -Photoemission Spectroscopy -Photoemission Spectroscopy
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    17 V. Pohotos Sitimulation -Neutron Scattering -Neutron Scattering
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    18 期末考 IV.CV章 期末評量
  • 期末考
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    教學要點概述:
    教材編選: ■ 自編教材 □ 教科書作者提供
    評量方法: 期末考:30%   期中考:30%   作業:40%  
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    研究所
    核心能力 期末考 期中考 作業
    核心能力一 材料相關領域之專業知識 3/10 3 3 3
    核心能力二 策劃及執行專題研究之能力 2/10 2 2 2
    核心能力四 創新思考及獨立解決問題之能力 2/10 2 2 2
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