課程大綱 Syllabus |
學生學習目標 Learning Objectives |
單元學習活動 Learning Activities |
學習成效評量 Evaluation |
備註 Notes |
序 No. | 單元主題 Unit topic |
內容綱要 Content summary |
1 | Introduction to the Semiconductor Industry |
1.1 Development of an Industry
1.2 Circuits Integration
1.3 IC Fabrication
1.4 Semiconductor Trends
1.5 The Electronic Era
1.6 Career in the Semiconductor Industry |
1. Describe the current economic state and the technical roots of the semiconductor industry.
2. Explain what is an integrated circuit (IC) and list the five circuit integration eras. |
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2 | Characteristics of Semiconductor Materials |
2.1 Atomic Structure
2.2 The Periodic Table
2.3 Classifying Materials
2.4 Silicon
2.5 Alternative Semiconductor Materials |
1. Describe the atom, including valence shell, band theory and ions.
2. Interpret the periodic table with regards to main group elements and explain how ionic and covalent bonds are formed. |
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3 | Device Technologies |
3.1 Circuit Types
3.2 Passive Component Structures
3.3 Active Component Structures
3.4 Latchup in CMOS Devices
3.5 Integrated Circuit Products |
Identify differences between analog and digital devices and passive and active components. Explain the effects of parasitic structures in passive components. |
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4 | Silicon and Wafer Preparation |
4.1 Semiconductor-Grade Silicon
4.2 Crystal Structure
4.3 Monocrystal Silicon Growth
4.4 Crystal Defects in Silicon
4.5 Wafer Preparation
4.6 Quality Measures
4.7 Epitaxial Layer |
1. Describe how raw silicon is refined into semiconductor grade silicon.
2. Explain the crystal structure and growth method for producing monocrystal silicon. |
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5 | Chemicals in Semiconductor Fabrication |
5.1 States of Matter
5.2 Properties of Materials
5.3 Properties of Chemicals |
1. Identify and discuss the four states of matter.
2. Describe the important chemical properties relevant to semiconductor manufacturing. |
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6 | Contamination Control in Wafer Fabs |
6.1 Types of Contamination
6.2 Sources and Control of Contamination
6.3 Wafer Wet-Cleaning |
1.描述無塵室之5種污染源形式,並討論每種污染源衍生之問題。
2.列出7項污染物之來源,並敘述其如何影響晶圓之潔淨度。
3.描述無塵室之潔淨等級。 |
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7 | Metrology and Defect Inspection |
7.1 IC Metrology
7.2 Quality Measures
7.3 Analytical Equipment |
1.解釋為何要量測IC,並討論相關的儀器設備、良率與資料收集。
2.說明晶圓製作時的12項品質量測,並指出相關之製造步驟。 |
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8 | Gas Control in Process Chambers |
8.1 Vacuum
8.2 Vacuum Pumps
8.3 Process Chamber Gas Flow
8.4 Residual Gas Analyzer
8.5 Plasma
8.6 Process Chamber Contamination |
1.解釋為何製作半導體之過程需要於反應室進行。
2.敘述真空環境之優點、真空範圍與其相關的幫浦。
3.說明真空反應室之氣體流動特性與其控制方法。 |
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作業
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9 | Midterm |
Review Ch1~Ch 8 |
確認上課內容是否完全吸收 |
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期中考
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10 | Oxidation |
9.1 Oxide Film
9.2 Thermal Oxidation Growth
9.3 Furnace Equipment
9.4 Horizontal Versus Vertical Furnaces
9.5 Oxidation Process
9.6 Quality Measures
9.7 Troubleshooting |
1.對半導體製造中之氧化薄膜描述其原子結構、不同的應用及優點。
2.敘述氧化之化學反應及描述在矽晶圓上氧化物如何成長。
3.解釋選擇性氧化及列舉兩個例子。 |
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11 | Deposition |
10.1 Film Deposition
10.2 Chemical Vapor Deposition
10.3 CVD Deposition Systems
10.4 Dielectrics and Performance
10.5 Spin-on Dielectrics
10.6 Epitaxy
10.7 Deposition Quality Measures
10.8 Troubleshooting |
1.描述多層金屬化。討論薄膜的特性需求。敘述和解釋薄膜成長的3個階段。
2.簡述不同的薄膜沈積技術。
3.列出和描述化學氣相沈積的8個基本步驟,包括不同形式的化學作用。 |
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12 | Metallization |
11.1 Metals and Metal Alloys used in Wafer Fab
11.2 Metal Deposition Systems
11.3 Metallization Schemes
11.4 Quality Measures
11.5 Troubleshooting |
1.解釋金屬化之專有名詞。
2.能列出和說明晶圓製造中6種金屬。討論每一種金屬的特性要求及應用。
3.能解釋銅金屬化在晶圓製造中之優點。描述銅製程之挑戰性。 |
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13 | Photolithography: Surface Preparation to Soft Bake |
12.1 Photolithography Processes
12.2 Eight Steps of Photolithography
12.3 Vapor Prime
12.4 Spin Coat
12.5 Soft bake
12.6 Quality Measures
12.7 Troubleshooting |
1.解釋微影之基本觀念,包括製程、CD、光頻譜、解析度及曝光度。
2.討論正及負雕像術之差異。
3.說出並描述微影8個基本步驟。 |
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作業 平時考
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14 | Photolithography: Alignment and Exposure |
13.1 Optical Lithography
13.2 Photolithograhy Equipment
13.3 Mix and Match
13.4 Quality Measures
13.5 Troubleshooting |
1.解釋微影中對準及曝光之目的。
2.描述微影中光的性質及曝光源的重要性。
3.對於光學雕像,敘述及說明光的重要觀點。
4.解釋解析度,描述它的關鍵參數及討論如何計算它。 |
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15 | Photolithography: Resist Development and Advanced Lithography |
14.1 Post Exposure Bake
14.2 Develop
14.3 Hard Bake
14.4 Develop Inspect
14.5 Advanced Lithography
14.6 Quality Measures
14.7 Troubleshooting |
1.解釋傳統與化學倍增式DUV光阻為何與如何執行曝光後烘烤。
2.分別針對傳統與化學倍增式DUV光阻,描述其負與正光阻顯影製程。 |
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16 | Etch |
15.1 Etch Parameters
15.2 Dry Etch
15.3 Plasma Etch Reactors
15.4 Dry Etch Applications
15.5 Wet Etch
15.6 Historical Perspective
15.7 Photoresist Removal
15.8 Quality Measures
15.9 Troubleshooting |
1.列出並討論9項重要的蝕刻參數。
2.解釋何謂乾蝕刻,包括它的優點並討論如何產生蝕刻作用。
3.列出並描述7種乾式電漿蝕刻反應器的設備系統。 |
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17 | Doping Processes |
16.1 Diffusion
16.2 Ion Implantation
16.3 Ion Implanter
16.4 Ion Implant Trends in Process Integration
16.5 Quality Measures
16.6 Troubleshooting |
1.解釋晶圓製作中,摻雜的目的與應用。
2.討論摻質擴散的原理與製程。
3.提供有關離子植入之概要說明,包括它的優缺點。 |
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18 | Final Exam |
Review Ch13~Ch 17 |
確認上課內容是否完全吸收 |
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作業 期末考
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