| 課程大綱 Syllabus |
學生學習目標
Learning Objectives |
單元學習活動
Learning Activities |
學習成效評量
Evaluation |
備註
Notes |
序
No. | 單元主題
Unit topic |
內容綱要
Content summary |
| 1 | 前言 半導體與積體電路發展史 |
0-1 History
0-2 Transistor
0-3 IC
0-4 IC semiconductor processes |
Overview of semiconductor
history |
講授
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| 2 | 第一章 晶體結構與 矽半導體物理特性 第二章 半導體能帶 與載子傳輸 |
1-1 Atomic model and Periodic table
1-2 Crystal structure
1-3 Material conductivity
1-4 Intrisic silicon, mass action law
1-5 Dopant, n-type and p-type
2-1 Energy band
2-2 Resistivity and sheet resistance
2-3 Carrier transpor |
Review of General Chemistry
Review of General Physics |
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| 3 | 第三章 化合物半導體晶體結構與物理 特性 |
3-1 Compound semiconductors
3-2 Crystal structure and energy band of Gallium Arsenide
3-3 Crystal structure and energy band of Gallium Nitride
3-4 Crystal structure and energy band of Silicon Carbide
3-5 Dopant, n-type and p-type
3-6 Comparison of GaAs, GaN, SiC and Si |
Review of Compound semiconductors |
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| 4 | 第十章 矽晶棒之生長 第十一章 矽晶圓之製作 |
10-1 Starting materials
10-2 Silicon ingot growth (CZ and FZ)
10-3 Dopants distribution in crystal growth
10-4 Crystal defects
11-1 Crystal orientation
11-2 Orientation, sawing and polishing
11-3 Benefit analysis of 12 inch wafer |
Understanding of Silicon wafer fabrication |
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| 5 | 第十三章 矽磊晶生長 第十四章 矽磊晶生長 |
13-1 Epitaxial layer
13-2 Silicon epitaxy
13-3 Growth process of Si epitaxial layer
14-1 Silicon epitaxy system
14-2 Evaluation of silicon epitaxy system |
Studies of Si epitaxial layer |
演講
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| 6 | 第十二章 化合物半導體晶棒之生長 第十五章 化合物半導體磊晶生長 |
12-1 GaAs ingot growth
12-2 GaN ingot growth
12-3 SiC ingot growth
15-1 GaAs epitaxy growth
15-2 GaN epitaxy growth
15-3 SiC epitaxy growth |
Studies of epitaxial layer of compound semiconductors |
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| 7 | 第十六章 矽氧化膜生長 第十七章 矽氧化膜生長機制 |
16-1 Thermal oxidation furnace
16-2 Si oxidation process
16-3 Dry and wet oxidation
16-4 Thickness evaluation of oxide layer
16-5 Redistribution of dopant during thermal oxidation
17-1 Silicon dioxide and oxidation
17-2 Oxidation mechanism
17-3 Super thin oxide layer
17-4 Quality evaluation of oxide layer
17-5 Quality improvement of oxide layer |
Studies of Si oxidation |
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期中考
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| 8 | 期中考 |
瞭解同學學習成效 |
瞭解同學學習成效 |
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| 9 | 第二十二章 化學氣相沉積 第二十三章 金屬接觸與沉積 |
22-1 CVD concepts
22-2 CVD procedures
22-3 LPCVD
22-4 Plasma CVD
22-5 Photo-CVD
22-6 Atomic layer deposition
23-1 Requirements of metalization
23-2 Vacuum deposition
23-3 Deposition technologies
23-4 Vacuum deposition procedures
23-5 Alloy and annealing
23-6 Metal silicides
23-7 Copper processes |
Studies of CVD and PVD |
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| 10 | 第二十章 微影技術 第二十一章 蝕刻技術 |
20-1 Lithography
20-2 Fabrication of mask
20-3 Photolithography
20-4 Resolution enhancement techniques
20-5 Light sources of lithography
21-1 Wet etching
21-2 Dry etching |
Studies of photolithography
Studiesof wet and dry etching |
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| 11 | 第十八章 摻雜質之擴散植入 第十九章 摻雜質之離子佈植 |
18-2 Diffusion process
18-3 Distribution of diffusion
19-1 Ion implantation
19-2 Annealing |
Studies of diffusion and ion implantation |
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| 12 | 第二十七章 製程潔淨控制與安全 |
27-1 Cleaning procedures
27-2 Water
27-3 Air and clean room
27-4 Personnel
27-5 Chemicals
27-6 Gases |
Understanding of process cleaniness control and safety |
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| 13 | 期末報告 |
Final reports related to semiconductors |
Final reports related to semiconductors |
心得發表
個案研究
閱讀討論
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報告
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| 14 | 期末報告 |
Final reports related to semiconductors |
Final reports related to semiconductors |
心得發表
個案研究
閱讀討論
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報告
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| 15 | 期末報告 |
Final reports related to semiconductors |
Final reports related to semiconductors |
心得發表
個案研究
閱讀討論
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報告
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| 16 | 期末考 |
瞭解同學學習成效 |
瞭解同學學習成效 |
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