E5140 教學大綱表

教學大綱表 (113學年度第1學期)

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課程名稱 Course Title	(中文) 半導體元件物理 (英文) Semiconductor Devices Physics			開課單位 Departments	電機工程研究所
				課程代碼 Course No.	E5140
授課教師 Instructor	林炯暐
學分數 Credit	3.0	必/選修 core required/optional	選修	開課年級 Level	研究所
先修科目或先備能力(Course Pre-requisites)：
課程概述與目標(Course Overview and Goals)：本課程主要引導同學了解微電子元件之動作原理，是積體電路設計如物聯網、人工智慧系開發所必需有的基礎。使同學具備進入高科技如台積電、群創、友達以及日月光等職場。
教科書(Textbook)	Semiconductor Devices: Physics and Technology, 2nd Edition by Simon M. Sze (施敏), 2002, John Wiley & Sons, Inc. ISBN: O-471-33372-7
參考教材(Reference)	Physics of semiconductor devices, 3 e, S. M. SZE , 2006, John Wiley & Sons, Inc. ISBN: O-471-14323-5 Wiley

課程大綱 Syllabus			學生學習目標 Learning Objectives	單元學習活動 Learning Activities	學習成效評量 Evaluation	備註 Notes
序 No.	單元主題 Unit topic	內容綱要 Content summary	學生學習目標 Learning Objectives	單元學習活動 Learning Activities	學習成效評量 Evaluation	備註 Notes
1	半導體固態物質之晶體結構	Crystal structure Si, Ge, GaAs materials	Crystal structure Si, Ge, GaAs materials
2	半導體電子能隙結構、載子生成之電氣特性	Direct and Indirect Energy Band Generation and Recombination of Carriers Tunnelimg Process, High-Field Effects	Direct and Indirect Energy Band Generation and Recombination of Carriers Tunnelimg Process, High-Field Effects
3	載子濃度與電流形式	Calculation of carrier concentration Temperature effects	Calculation of carrier concentration Temperature effects
4	PN 接面二極體結構與操作原理	Energy Band of PN junction I-V and C-V relationship Device Modeling	Energy Band of PN junction I-V and C-V relationship Device Modeling
5	PN 接面二極體結構與操作原理	Energy Band of PN junction I-V and C-V relationship Device Modeling	Energy Band of PN junction I-V and C-V relationship Device Modeling
6	BJT (雙載子接面電晶體；Bipolar Junction Transistor)結構與操作原理	Transistor Actions,Static Characteristics of BJT,Frequency Response and Switching of BJT	Transistor Actions,Static Characteristics of BJT,Frequency Response and Switching of BJT
7	BJT (雙載子接面電晶體；Bipolar Junction Transistor)結構與操作原理	Transistor Actions,Static Characteristics of BJT,Frequency Response and Switching of BJT	Transistor Actions,Static Characteristics of BJT,Frequency Response and Switching of BJT
8	期中考試評量	期中考試評量	期中考試評量
9	MOS capacitor(金氧半電容)結構與操作原理	MOS capacitor Fundamentals, MOS Memory Structures	MOS capacitor Fundamentals, MOS Memory Structures
10	MOS capacitor(金氧半電容)結構與操作原理	MOS capacitor Fundamentals, MOS Memory Structures	MOS capacitor Fundamentals, MOS Memory Structures
11	MOSFET(金氧半場效電晶體)結構與操作原理	MOSFET Fundamentals, MOSFET Scaling, MOSFET on Insulator, MOS Memory Structures and The Power MOSFET	MOSFET Fundamentals, MOSFET Scaling, MOSFET on Insulator, MOS Memory Structures and The Power MOSFET
12	MOSFET(金氧半場效電晶體)結構與操作原理	MOSFET Fundamentals, MOSFET Scaling, MOSFET on Insulator, MOS Memory Structures and The Power MOSFET	MOSFET Fundamentals, MOSFET Scaling, MOSFET on Insulator, MOS Memory Structures and The Power MOSFET
13	MESFET and Related Devices(金半場效電晶體與相關電子元件)	Metal-Semiconductor Contacts, MESFET and MODFET	Metal-Semiconductor Contacts, MESFET and MODFET
14	MESFET and Related Devices(金半場效電晶體與相關電子元件)	Metal-Semiconductor Contacts, MESFET and MODFET	Metal-Semiconductor Contacts, MESFET and MODFET
15	微波二極體，量子效應 and 熱載子電子元件	Tunnel Diode,IMPATT Diode, Transderred-Electron Devices, Quanum-Effect Devices	Tunnel Diode,IMPATT Diode, Transderred-Electron Devices, Quanum-Effect Devices
16	期末考試評量	期末考試評量	期末考試評量
17	彈性教學(一)	學習內容回顧並由同學進行線上討論與心得感想說明	統整同學實質收穫	討論心得發表	彈性教學
18	彈性教學(二)	學習內容回顧並由同學進行線上討論與心得感想說明	統整同學實質收穫	討論心得發表	彈性教學

彈性教學週活動規劃

序 No.	實施期間 Period	實施方式 Content	教學說明 Teaching instructions	彈性教學評量方式 Evaluation	備註 Notes
1	起:2024-01-01 迄:2024-01-14	1.同步遠距教學 Synchronous distance learning	整個學習內容回顧，老師與同學進行線上討論。	心得感想發表。

教學要點概述：
1.自編教材 Handout by Instructor：
■ 1-1.簡報 Slids
□ 1-2.影音教材 Videos
□ 1-3.教具 Teaching Aids
□ 1-4.教科書 Textbook
□ 1-5.其他 Other
□ 2.自編評量工具/量表 Educational Assessment
□ 3.教科書作者提供 Textbook

成績考核 Performance Evaluation：期末考：35% 期中考：35% 其他評量：20% 彈性教學：10%

教學資源(Teaching Resources)：
■ 教材電子檔(Soft Copy of the Handout or the Textbook)
□ 課程網站(Website)
扣考規定：https://curri.ttu.edu.tw/p/412-1033-1254.php